Unipolar resistance switching behavior of Pr4O7-Pr2CuO4-δ thin films

Pr4O7-Pr2CuO4-δ (PCO) thin films were grown on Pt (Pt/Ti/SiO2/Si) substrates by pulsed laser deposition and their resistive switching behavior was investigated. The resistance ratio RH/L (Rhigh/Rlow) could be larger than 104, which can be maintained up to 50 cycles and 104 s without detectable degradation. The results show that the Pt/Pr4O7-PCO/Pt device possesses excellent endurance and retention properties. The physical mechanism of resistive switching in Pr4O7-PCO film could be ascribed to the forming and rupturing of conductive filaments via migration of oxygen vacancies.