کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466506 1517993 2016 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control
چکیده انگلیسی
Reactive high-power impulse magnetron sputtering was used to deposit HfO2 films on Si substrates using a voltage pulse duration, t1, from 100 to 200 μs and an deposition-averaged target power density, < Sd >, from 7.2 to 54 Wcm− 2. The effects of these processing parameters on the microstructure and properties of the films were studied by atomic force microscopy, nano-indentation, X-ray diffraction, electron diffraction and high-resolution transmission electron microscopy. Four HfO2 films were prepared with (1) t1 = 100 μs, < Sd > = 7.2 Wcm− 2 (T100S7), (2) t1 = 200 μs, < Sd > = 7.3 Wcm− 2 (T200S7), (3) t1 = 200 μs, < Sd > = 18 Wcm− 2 (T200S18) and (4) t1 = 200 μs, < Sd > = 54 Wcm− 2 (T200S54). All films were found to be composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. The interlayer structure of the films was found to contain a population of lower density nanoscale regions. A reduction in < Sd > in films T200S54, T200S18, T200S7 and T100S7 caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ~ 46 nm to ~ 21 nm. This microstructural change was accompanied by a concomitant change of the grain boundary structure from tight and interlocking in films T200S54 and T200S18, to rough and thicker (~ 1 nm) boundaries in films T200S7 and T100S7. Films prepared with larger t1 = 200 μs have a monoclinic HfO2 structure and that with smaller t1 = 100 μs exhibits a mixture of monoclinic and orthorhombic HfO2. A high hardness of 17.0-17.6 GPa was shown for films with a monoclinic HfO2 structure. The films exhibited a refractive index of 2.02-2.11 and an extinction coefficient between 0.1 × 10− 3 and 1 × 10− 3 (both at a wavelength of 550 nm). High refractive index was achieved for films T200S54 and T200S18 owing to the presence of a dense microstructure with sharp and interlocking grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 239-249
نویسندگان
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