کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466516 | 1517993 | 2016 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactant. ZrO2 films exhibited systematic changes in phase and energy band gap as a function of the ozone concentration. The crystal phase was transformed from the monoclinic phase to a tetragonal phase in the presence of higher ozone concentrations. In addition, spectroscopic ellipsometry measurements showed that the optical band gap and oxygen vacancy defects decreased with increasing ozone concentration. The valence band maximum also shifted closer to the Fermi energy level with increasing ozone concentration. The change in electronic structure driven by a high concentration of ozone led to reduced leakage current density and a high dielectric constant in the ZrO2-based metal-insulator-metal capacitors. These improvements were not observed for depositions performed using conventional ZrO2 ALD with oxygen and water reactants.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 317-322
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 317-322
نویسندگان
Hyoseok Song, Heeyoung Jeon, Changhee Shin, Seokyoon Shin, Woochool Jang, Joohyun Park, Jaewan Chang, Jae Hyoung Choi, Younsoo Kim, HanJin Lim, Hyungtak Seo, Hyeongtag Jeon,