Atomically resolved interface structure between epitaxial TiN film and MgO substrate

In this study, we used a high quality epitaxial TiN thin film grown on MgO (001) substrate for the investigation of the TiN/MgO interface structure which was characterized with scanning transmission electron microscopy (STEM) at atomic resolution. Analyses of high angle annular dark-field and annular bright-field STEM image contrast with X-ray energy dispersive spectroscopy maps show that a 2 ~ 4 nm diffuse interlayer of mixed compositions exists coherently between TiN and MgO with the same structure and across the interface the ionic bonding sequences are maintained without any interruption.