Doping Ga effect on ZnO radio frequency sputtered films from a powder target

The electrical parameters were obtained with both optical reflectance based on the Drude free-electron model and the Hall method and similar tendencies were observed within the two methods. The highest figure of merit observed in this study was 3.57 × 10− 3 Ω− 1 showing that the 3 wt.% ZnO:Ga films are potentially attractive for application as transparent conductive oxide thin films in solar cells. RF sputtering from a powder target was found to be a simple and cost effective technique for the synthesis of ZnO thin films for potential applications in the renewable energy devices.