کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466581 | 1398906 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Al2O3 thin films with thickness between 2 and 100 nm were synthetized at 250 °C by thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited and annealed layers were carried out using ellipsometry, X-ray reflectivity, and X-ray photoelectron spectroscopy. A silicon-rich SiOx layer at the interface between Si and Al2O3 was introduced in the optical models to fit the experimental data. Surface passivation performances of Al2O3 layers deposited on n-type float-zone monocrystalline silicon were investigated as a function of thickness and post-deposition annealing conditions. Surface recombination velocity around 2 cm.s â 1 was measured after the activation of the negative charges at the Si/Al2O3 interface under optimized annealing at 400 °C for 10 min. The evolution of the interface layer and of the material properties with the thermal treatment was studied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 617, Part B, 30 October 2016, Pages 108-113
Journal: Thin Solid Films - Volume 617, Part B, 30 October 2016, Pages 108-113
نویسندگان
Corina Barbos, Danièle Blanc-Pelissier, Alain Fave, Claude Botella, Philippe Regreny, Geneviève Grenet, Elisabeth Blanquet, Alexandre Crisci, Mustapha Lemiti,