کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6943821 | 1450369 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275 nm2 (35 nm Ã 65 nm). Stable switching was observed between a High-Resistive State HRS (â¼1 MΩ) and a Low-Resistive State LRS (â¼100 kΩ), using a low program current of â¼1 μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100 μA (high-CC LRS) or 10 μA (low-CC LRS), resulting, respectively in LRS resistances of 10 kΩ or 100 kΩ. The projected retention stability of low-CC LRS is ⩾10 years at 80 °C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (â¼100 kΩ), suggesting gentle filament formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 112, December 2013, Pages 92-96
Journal: Microelectronic Engineering - Volume 112, December 2013, Pages 92-96
نویسندگان
Y.Y. Chen, L. Goux, L. Pantisano, J. Swerts, C. Adelmann, S. Mertens, V.V. Afanasiev, X.P. Wang, B. Govoreanu, R. Degraeve, S. Kubicek, V. Paraschiv, B. Verbrugge, N. Jossart, L. Altimime, M. Jurczak, J. Kittl, G. Groeseneken, D.J. Wouters,