کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728879 892858 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thin films of silica imbedded silicon and germanium quantum dots by solution processing
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Thin films of silica imbedded silicon and germanium quantum dots by solution processing
چکیده انگلیسی

Hydrophilic silicon (0.9 nm) and germanium (2.7 nm) quantum dots (QDs), synthesized utilizing micelles to control particle size, were coated with silica using liquid phase deposition. The use of dodecyltrimethylammonium bromide as a surfactant yielded uniform spheres (Si@SiO2=57 nm; Ge@SiO2=32 nm), which could then be arrayed in three dimensions using a vertical deposition method on quartz plates. The silica coated QDs were characterized by UV–visible spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and transmission electron microscopy. The thin films were characterized by UV–visible spectroscopy, scanning electron microscopy, and the measurement of a photocurrent.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 6, December 2012, Pages 713–721
نویسندگان
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