کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
77875 | 49307 | 2015 | 7 صفحه PDF | دانلود رایگان |

• Single phased MnZnO3 photoanode thin films from single source precursor.
• Topography and cross sectional studies.
• Optical band gap of 2.18 eV.
• An anodic photocurrent density of 300 µA/cm2 at 0 V vs. Ag/AgCl/3 M KCl.
Single phased manganese-zinc oxide (MnZnO3) solid solution thin films have been deposited on fluorine doped tin oxide (FTO) coated glass substrates by aerosol assisted chemical vapor deposition (AACVD) using a single source bimetallic complex, [Mn2Zn2(TFA)8(THF)4]n (1) (where TFA=trifluroactetato and THF=tetrahydrofuran), as precursor. The complex (1) was obtained by direct reaction of diacetatozinc(II) dihydrate, diacetatomanganese(II) and trifloroacetic acid in THF and was characterized by physico-chemical methods. The thickness of the film observed by a profilometer, is about 375 nm. The phase purity and the stoichiometry of the films were determined by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX). The field emission gun-scanning electron microscopic (FEG-SEM) and atomic force microscopic (AFM) images confirmed that the film deposited at 500 °C shows an agglomerated flower-like structure with high roughness and porosity. The optical measurements suggested that MnZnO3 has a direct band gap of 2.18 eV. The photoelectrochemical (PEC) studies showed an anodic photocurrent density of 300 µA/cm2 at 0 V vs. Ag/AgCl/3 M KCl.
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Journal: Solar Energy Materials and Solar Cells - Volume 137, June 2015, Pages 258–264