کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7932925 | 1512845 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Zener diode behavior of nitrogen-doped graphene quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Nitrogen-doped highly fluorescent graphene quantum dots (N-GQDs) were synthesized, using ammonia as nitrogen and d-glucose as carbon source, using a facile microwave-assisted protocol, where the N/C ratio could be varied from 0.19 to 0.25 (% w/w, determined from EDAX). The as-synthesized quantum dots consisting of one to three graphene monolayers exhibited high crystalline morphology with an average size of 1.8â¯Â±â¯0.2â¯nm. HRTEM data showed the presence of both pyridinic-N and pyrrolic-N structures. Semiconductor profile of the N-GQDs was extensively probed, and it was noticed that the optical bandgap, knee-voltage and break-down voltage varied linearly with the N/C ratio. The doped samples showed with an optical bandgap â5.3â¯eVâ¯at the maximum nitrogen doping yielding n-type semiconductor property. Clear Zener diode attributes with a large forward bias current (100-200â¯mA), and a smaller reverse bias current of typically half that value was found.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 104, October 2018, Pages 36-41
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 104, October 2018, Pages 36-41
نویسندگان
Jadupati Nag, Kamla Rawat, K. Asokan, D. Kanjilal, H.B. Bohidar,