کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939066 | 1513187 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of (AlxGa1-x)2O3 on sapphire
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The (AlxGa1-x)2O3 and Ga2O3 films are epitaxially grown on sapphire by pulsed laser deposition (PLD). From X-ray photoelectron spectroscopy (XPS) and X-ray diffraction measurements, the (AlxGa1-x)2O3 films with Al compositions of 0.39, 0.49 and up to 0.53 are all single crystal and there is an out-of-plane tensile strain in (AlxGa1-x)2O3 films within the range from 0.164% to 0.345%. The optical properties are investigated by Spectral Ellipsometry (SE) together with the optical transmission method. The spectral dependence of the refractive index (n) by SE is in accordance with the reported experiment results. The thicknesses of the Ga2O3 and (AlxGa1-x)2O3 films obtained by SE fitting are 201, 116.8, 40 and 84.61Â nm, respectively, which is consistent with the field emission scanning electron microscopy (FESEM) measurement results. In addition, with the Al composition increasing, the bandgaps of the (AlxGa1-x)2O3 films determined from the SE are both increase from 4.95 to 5.49, 5.7 and 5.75Â eV, almost identical to the values determined by the transmittance spectra, which is larger than some extent compared to reference [13] for the compressive strain in the (AlxGa1-x)2O3 films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 82-88
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 82-88
نویسندگان
Zhuangzhuang Hu, Qian Feng, Jincheng Zhang, Fuguo Li, Xiang Li, Zhaoqing Feng, Chunfu Zhang, Yue Hao,