Performance analysis of asymmetric dielectric modulated dual short gate tunnel field effect transistor

In this work, a novel asymmetric dielectric modulated dual short gate (ADMDG) TFET is designed and their performance was analysed. The ADMDG TFET using silicon, germanium, and SiGe as channel and source materials were simulated and results are compared with conventional DGTFET. The device simulation has been performed using Sentaurus TCAD simulator. It is found that the proposed structure provides overall improved performance for silicon TFET such as higher on-current (Ion = 4.2 μA), smaller SS = 40mV/decade and maximum Ion/Ioff ratio (8.2 × 1010) compared to conventional DGTFET. The on-current values obtained for SiGe source, Ge source and Ge channel ADMDG TFET are 0.22 mA, 0.69 mA and 0.14 mA respectively compared to silicon ADMDG TFET but compromises other dc parameters such as SS and Ion/Ioff ratio. For CMOS circuits, the p-type silicon TFET of the proposed structure were also simulated and presented. Moreover, the proposed TFET structure is also simulated for different temperatures and its performance were compared and analysed.