Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

Band structure and optical gain properties of [111]-oriented AlGaInAs/AlGaInAs-delta-InGaAs multi-quantum wells, subjected to piezoelectric field, for the near-infrared lasers diodes applications was proposed and investigated in this paper. By using genetic algorithm based on optimization technique we demonstrate that the structural parameters can be conveniently optimized to achieve high-efficiency laser diode performance at room temperature. In this work, significant optical gain for the wished emission wavelength at 1.55 μm and low threshold injection current are the optimization target. The end result of this optimization is a laser diode based on InP substrate using quaternary compound material of AlGaInAs in both quantum wells and barriers with different composition. It has been shown that the transverse electric polarized optical gain which reaches 3500 cm−1 may be acquired for λ = 1.55 μm with a threshold carrier density Nth≈1.31018cm−3, which is very promising to serve as an alternative active region for high-efficiency near-infrared lasers. Finally, from the design presented here, we show that it is possible to apply this technique to a different III-V compound semiconductors and wavelength ranging from deep-ultra-violet to far infrared.