High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 104, April 2017, Pages 112-117

Panfeng Ji, Xuelin Yang, Yuxia Feng, Jianpeng Cheng, Jie Zhang, Anqi Hu, Chunyan Song, Shan Wu, Jianfei Shen, Jun Tang, Chun Tao, Yaobo Pan, Xinqiang Wang, Bo Shen,