کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941945 | 1513202 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy](/preview/png/7941945.png)
چکیده انگلیسی
In this work, we used EDX, EELS and FTIR spectroscopy to investigate the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The EDX analysis of a plate-like precipitate demonstrated that the composition of the precipitate is SiO1.93. This result was confirmed by EELS where the characteristic plasmon peak of SiO2 was observed. Additionally, the absorption band of plate-like precipitates at 1223Â cmâ1 was found in the FTIR spectrum measured at liquid helium temperature. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 231-235
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 231-235
نویسندگان
D. Kot, G. Kissinger, M.A. Schubert, M. Klingsporn, A. Huber, A. Sattler,