کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8032498 1517951 2018 25 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of substrate temperature on growth and electrical properties of pulsed laser deposition grown 0.5Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of substrate temperature on growth and electrical properties of pulsed laser deposition grown 0.5Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 thin films
چکیده انگلیسی
0.5Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 (PNNZT) thin films fabricated on Pt/Ti/SiO2/Si(100) substrate using pulsed laser deposition (PLD) technique is discussed in this work. The effect of substrate temperature (TS) on phase formation, microstructure, dielectric and ferroelectric properties of PNNZT thin films have been studied by varying the TS from 100 to 800 °C with an interval of 100 °C. A minimum TS of ~ 500 °C was required to obtain the pure perovskite phase while the best electrical properties are achieved at TS = 800 °C. The relative permittivity (εr')) and remnant polarization (Pr) of the PNNZT thin films increased from 130 to 1510 and 13.7 to 18.5 μC/cm2 (at 1 kHz), respectively with increasing TS from 500 to 800 °C, while the average grain size (GS) grew from 6 to 85 nm. The conductivity and impedance studies led to the understanding of electrical behavior of the deposited PNNZT thin films. The observed changes in electrical properties were ascribed to the grain growth with the increase in TS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 661, 1 September 2018, Pages 16-22
نویسندگان
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