کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8032612 1517952 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metal-semiconductor-metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Metal-semiconductor-metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts
چکیده انگلیسی
We report on the characteristics of reduced graphene oxide (rGO)/GaN Schottky diodes in which the reduction process is performed at various temperatures. The Schottky barrier height of the rGO/GaN Schottky diode peaks at 1.07 eV with the reduction temperature of 650 °C, caused by changes in the O-containing functional groups and surface Fermi-level pinning during thermal reduction. The interdigitated rGO/GaN metal-semiconductor-metal photodiode using GO reduced at 650 °C exhibits a responsivity of 0.128 A/W under 365-nm illumination, with a sharp cutoff near the GaN energy bandgap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 824-827
نویسندگان
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