کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032622 | 1517952 | 2018 | 38 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
ترجمه فارسی عنوان
اثر گذرایی سطح توسط یک لایه اکسید کننده حرارتی با دمای پایین و دمای محیط برای سلول های خورشیدی سیلیکون چند سویه
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
In this study, we show that the efficiency and carrier life time of multi-crystalline silicon solar cells were significantly improved by using a low pressure (20,000â¯Pa) and temperature (650â¯Â°C~750â¯Â°C) environment grown thermal oxide (TO) as the surface passivation layer. In this experiment, during the first stage, the oxidation process was done at 650â¯Â°C and a lower pressure of 20,000â¯Pa for 2 mins under the flow a gas mixture of N2/O2 in ratio of 2:1. In the second stage, a temperature of 750â¯Â°C was used at the same pressure for the post-growth annealing process under a pure N2 ambient for 25 mins. Consequently, conversion efficiency was significantly increased by 0.55% with the surface passivation layer grown by low pressure and temperature TO process. The sheet resistance, carrier lifetime, internal quantum efficiency (IQE), increased by 6.32â¯Î©/sq., 22.18â¯Î¼s, 4.33%, respectively, and the average reflection was reduced of 0.62%. Thus, the low pressure and temperature thermal oxidation process was an efficient way to increase the efficiency of the multi-crystalline silicon solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 1-9
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 1-9
نویسندگان
Shun Sing Liao, Chuan Lung Chuang, Yueh Chin Lin, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang,