کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032682 | 1517958 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The properties of the HfO2 ultra-thin films high-k gate stack deposited on surface passivated (GeON) germanium with three different orientations viz. Ge (100), Ge (110) and Ge (111) for CMOS applications have been studied. The effect of post deposition annealing (PDA) at temperatures 350â¯Â°C and 400â¯Â°C has been investigated. The high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and atomic force microscopy were used to study the interfacial, chemical and surface properties of atomic layer deposited-HfO2 ultrathin films, respectively. The high frequency conductance method was applied to evaluate the value of interface trap density (Dit) and the lowest Dit of 6.24â¯Ãâ¯1012â¯cmâ2evâ1 was evaluated for (111) orientation annealed at 400â¯Â°C than (100) and (110) orientation. The effective barrier height extracted from the Fowler-Nordheim conduction transport is in the range of 0.29-0.70â¯eV for all samples and shows the significant dependence of the substrate orientations and PDA temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 30-37
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 30-37
نویسندگان
Khushabu S. Agrawal, Vilas S. Patil, Ashok M. Mahajan,