کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032687 | 1517958 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tuning electrical resistivity anisotropy of ZnO thin films for resistive sensor applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By in-air annealing the samples from room temperature (RT) up to 200â¯Â°C and cooling down to RT again, the differences between the resistivity values along the xx and yy directions become significant, a clear sign of the anisotropic nature of the films. The anisotropy obtained during the annealing cycles of the films increased from 0.98 to 1.10 and, consequently, the Temperature Coefficient of Resistance, TCR, increased in both xx and yy directions, from TCRxx and yy ~9.0â¯Ãâ¯10â4 to TCRxxâ¯=â¯6.82â¯Ãâ¯10â3 and TCRyyâ¯=â¯5.97â¯Ãâ¯10â3â¯Â°Câ1. Important also to note is that the increase of the grain size of the films showed to have a significant effect in the effective anisotropy, revealing to be a major factor to take into account.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 93-99
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 93-99
نویسندگان
Armando Ferreira, Nicolas Martin, Senentxu Lanceros-Méndez, Filipe Vaz,