کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032688 | 1517958 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition](/preview/png/8032688.png)
چکیده انگلیسی
Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edcâ¯=â¯0.43â¯eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37â¯V at 300â¯K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100â¯K and at ~165â¯K with energy levels at ~0.09â¯eV and ~0.36â¯eV from the conduction band, respectively; and at least one hole trap at ~275â¯K with energy level at ~0.61â¯eV from the valence band (~0.33â¯eV from the conduction band) existing in the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 77-84
Journal: Thin Solid Films - Volume 654, 31 May 2018, Pages 77-84
نویسندگان
Buguo Wang, Z.-Q. Fang, Bruce Claflin, David Look, John Kouvetakis, Yung Kee Yeo,