کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8032709 1517959 2018 33 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry
ترجمه فارسی عنوان
بررسی ترکیب بور در لایه های الماس دوتایی دلتا با استفاده از طیف سنجی جرمی ثانویه
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Boron incorporation into ultra-thin boron doped epitaxial grown diamond layers of thickness of 1 to 2 nm was investigated. Time of flight secondary ion mass spectroscopy was used to examine the boron concentration as a function of depth of the samples. The boron depth profiles were deconvoluted by modeling and measuring the depth resolution function with specially grown multiple delta doped layers on the same substrate. Boron incorporation in the delta layers as a function of substrate temperature and B/C ratio in the reactant gas was determined. A diamond deposition regime in which the doped delta layers with thickness of 1-2 nm and with boron concentrations of about 4-5·1020 cm− 3 was obtained. Such layers are suitable for implementation of two-dimensional hole “gas” in diamond with high mobility and high carrier concentrations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 653, 1 May 2018, Pages 215-222
نویسندگان
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