TeO2.33/SiO2 one-dimensional photonic crystals with defect layer and its photo-induced effect

The aim of this work is to experimentally investigate one-dimensional (1D) photonic crystals (PCs) and the photo-induced effect of their defect layer. A radio frequency (RF) magnetron sputtering technique was used to fabricate ten-pair 1D PCs with and without a single defect layer, utilizing TeO2.33 and SiO2 with different refractive indices. The photonic band structures in the PCs were also analyzed, and the measured transmittance (T) spectra were compared with the simulated results. The 1D PC without a defect layer had a forbidden band gap in the wavelength range of 1203-1421 nm. The 1D PC with defect layer generated a sharp peak within a photonic band gap (PBG) at the central wavelength of 1291 nm. After exposure to a He-Cd laser of λ = 325 nm, the resonant T peak shows red-shift because of photodarkening effect caused by the behavior of valence-alternation pairs (VAPs) in amorphous chalcogenides.