کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032858 | 1517962 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11â20) at high deposition rates and at substrate temperatures as low as 350â¯Â°C becomes feasible.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 650, 31 March 2018, Pages 65-70
Journal: Thin Solid Films - Volume 650, 31 March 2018, Pages 65-70
نویسندگان
Meyer Frank, Oeser Sabine, Graff Andreas, Reisacher Eduard, Carl Eva-Regine, Fromm Alexander, Wirth Marco, Groener Lukas, Burmeister Frank,