کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032942 | 1517963 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tuning of transport properties of the double-step chemical bath deposition grown zinc oxide (ZnO) nanowires by controlled annealing: An approach to generate p-type ZnO nanowires
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO nanowires/p-Si heterojunction diodes are fabricated by employing low temperature double-step chemical bath deposition technique. The grown samples are initially annealed at different temperatures in the range of 300â¯Â°C to 600â¯Â°C at 10â¯psi argon atmosphere for 30â¯min. Field emission scanning electron microscope images confirmed the growth of vertically oriented ZnO nanowires with average nanowire diameter and height of 183-190â¯nm and ~1.4â¯Î¼m, respectively. The x-ray diffraction study shows that the samples are poly-crystalline with hexagonal wurtzite structure and ZnO nanowires are vertically c-axis oriented. The photoluminescence study indicates the presence of oxygen vacancy in as-grown and 300â¯Â°C annealed sample, whereas, the 500â¯Â°C annealed ZnO nanowires show the existence of oxygen interstitials. Heterojunction diodes are fabricated on the as-grown, 300â¯Â°C, 400â¯Â°C, 450â¯Â°C, 460â¯Â°C, 475â¯Â°C, 490â¯Â°C, 500â¯Â°C, 550â¯Â°C and 600â¯Â°C annealed nanowires for the measurements of current-voltage and capacitance-voltage characteristics. Both the results indicate an electron dominated transport for the as-grown to 490â¯Â°C samples and hole transport for â¥500â¯Â°C annealed sample. The acceptor or p-type dopant formation temperature is observed to be 500â¯Â°C, which shows an effective acceptor concentration of 1.15â¯Ãâ¯1015â¯cmâ3 (at 10â¯kHz) and 1.74â¯Ãâ¯1015â¯cmâ3 (at 1â¯MHz). Thus the work indicates a possible route for converting the n-type ZnO nanowires to p-type of nature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 129-135
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 129-135
نویسندگان
Avishek Das, Rajib Saha, Shrabani Guhathakurata, Saptarshi Pal, Nayan Ranjan Saha, Himadri Sekhar Dutta, Anupam Karmakar, Sanatan Chattopadhyay,