کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033270 | 1517968 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an important role in hot carrier stress-induced degradation, which leads to carrier-trapping in the etch stop layer between the active layer and the redundant drain electrode. Hot carrier stress has different influences on device characteristics, depending on materials and structure. Hot carrier stress causes more electron trapping in the etch stop layer below the redundant drain electrode in the presence of smaller source/drain metal work function or a longer redundant drain electrode. To further verify the mechanisms of the degradation behavior, the barrier height for Fowler-Nordheim-tunneling is extracted by a fitting charge trapping model. It is found that the barrier height for Fowler-Nordheim-tunneling is different for different source/drain materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 644, 31 December 2017, Pages 45-51
Journal: Thin Solid Films - Volume 644, 31 December 2017, Pages 45-51
نویسندگان
Chung-I Yang, Ting-Chang Chang, Bo-Wei Chen, Wu-Ching Chou, Po-Yung Liao, Sung-Chun Lin, Cheng-Yen Yeh, Chia-Sen Chang, Cheng-Ming Tsai, Ming-Chang Yu,