کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033349 | 1517971 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Epitaxial lateral overgrowth (ELO) process of gallium nitride (GaN) films on cone-shaped patterned sapphire substrate (PSS), which was pretreated by ion-implantation was performed by using a metal organic chemical vapor deposition. A 250-nm-thick silicon dioxide (SiO2) mask was covered on the planar surface of the PSS to protect them from ion-implantation damages, whereas the cone-shaped patterns of the PSS were exposed to collide with the N+ ions. The ion-implantation pretreatment was selectively carried out on the cone-shaped pattern of PSS at 67.5 keV with a high dose of 5 Ã 1017 cmâ 2. As a result of ion-implantation pretreatment, nucleation growth of GaN poly-grains was inhibited on the cone-shaped patterns with various crystal planes, such as c-like plane, R-like plane, and n-like plane. Surface roughness and crystal quality of GaN films grown on ion-implanted PSS were improved owing to the inhibition of nucleation growth on the patterns. The ion-implantation pretreatment is a very promising technique in the ELO process of GaN on an uneven substrate such as a cone-shaped PSS that includes various crystal planes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 641, 1 November 2017, Pages 2-7
Journal: Thin Solid Films - Volume 641, 1 November 2017, Pages 2-7
نویسندگان
Dae-sik Kim, Woo Seop Jeong, Hyungduk Ko, Jae-Sang Lee, Dongjin Byun,