کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8033542 1517994 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Origin of positive Vth shift and mobility effects in amorphous GaInZnO thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Origin of positive Vth shift and mobility effects in amorphous GaInZnO thin films
چکیده انگلیسی
We investigated the relationship between band alignments and threshold voltage shifts of GaInZnO (GIZO) thin films grown on SiO2/p++-Si by the RF sputtering method via utilizing X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energies of the GIZO thin films are increased from 3.03 eV to 3.43 eV with the increase in their Gallium (Ga)/Indium (In) ratios of 0.83, 1.05, and 1.34. The barrier height of GIZO/Mo is also increased by increasing in the Ga/In ratio, and then the threshold voltages positively shift. From the result of DLTS, it is found that the D defect is located at 0.56 eV below the conduction band, and its defect density shows the increasing tendency by the increase in the ratio of Ga/In (i.e. the decrease in In content). From the transfer curves of the GIZO thin films, the mobility shows the decreasing tendency by the increase in the ratio of Ga/In. As a result, it is suggested that the increase in the density of D defect density in the GIZO thin film plays a dominant role in the decrease in its mobility.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 616, 1 October 2016, Pages 456-460
نویسندگان
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