کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033616 | 1518006 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Black-silicon production process by CF4/H2 plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanoscale structures in silicon have been produced by means of a maskless plasma process that employs tetrafluoromethane and hydrogen. The influence of the radio-frequency power and process time on the surface texturing was studied. Desirable texturing effect has been achieved by applying an RF power in the range of 200-280Â W and process time in the range of 20-30Â min. The textured surface is characterized by nanopillars with lateral dimensions ranging from 50 to 300Â nm and with a depth in the 100-300Â nm range. Depending on process parameters in the plasma etching recipe, the optical reflectance of the silicon surface is lowered and RÂ <Â 5% is reached in the range going from the visible to the near-IR region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 603, 31 March 2016, Pages 173-179
Journal: Thin Solid Films - Volume 603, 31 March 2016, Pages 173-179
نویسندگان
E. Vassallo, M. Pedroni, S.M. Pietralunga, R. Caniello, A. Cremona, F. Di Fonzo, F. Ghezzi, F. Inzoli, G. Monteleone, G. Nava, V. Spampinato, A. Tagliaferri, M. Zani, G. Angella,