کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033664 | 1518006 | 2016 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing](/preview/png/8033664.png)
چکیده انگلیسی
Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 603, 31 March 2016, Pages 377-381
Journal: Thin Solid Films - Volume 603, 31 March 2016, Pages 377-381
نویسندگان
J. Laube, D. Nübling, H. Beh, S. Gutsch, D. Hiller, M. Zacharias,