کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033844 | 1518015 | 2015 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and electrical characterization of Graphene Oxide films
ترجمه فارسی عنوان
سنتز و بررسی الکتریکی فیلم های گرافیتی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100Â Hz to 10Â MHz) at different temperatures. AC conductivity Ïac of the films was observed to be varied with angular frequency, Ï as ÏS, with SÂ <Â 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 590, 1 September 2015, Pages 118-123
Journal: Thin Solid Films - Volume 590, 1 September 2015, Pages 118-123
نویسندگان
Muhammad Yasin, T. Tauqeer, Syed M.H. Zaidi, Sait E. San, Asad Mahmood, Muhammet E. Köse, Betul Canimkurbey, Mustafa Okutan,