کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8033924 1518015 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
چکیده انگلیسی
We have investigated mechanisms of ion-cut in H2+-implanted GaN by analyzing microstructural features of H2+-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 590, 1 September 2015, Pages 64-70
نویسندگان
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