Mechanical and chemical investigation of the interface between tungsten-based metallizations and annealed borophosphosilicate glass

The focus of this study was on the interface between W-based metallizations and an annealed borophosphosilicate glass (BPSG) dielectric. W-based metallizations are often used in semiconductor devices because of their favourable properties as a diffusion barrier. The interface was characterized mechanically and chemically. For the determination of the interface energy release rate the 4-point-bending method was used. The fracture surfaces resulting from the 4-point-bending experiments were examined to determine the failing interface and the topography of the fracture surfaces. Chemical characterizations of intact interfaces were performed using an electron dispersive X-ray approach in a scanning transmission electron microscope to provide information why Ti incorporated in a W-layer improves the adhesion on annealed BPSG significantly compared to a pure W-layer.