کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034175 | 1518023 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Light soaking induced doping increase and sodium redistribution in Cu(In,Ga)Se2-based thin film solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Light-induced metastabilities of Cu(In,Ga)Se2 (CIGS)-based thin film solar cells have been extensively researched for many years. It is commonly observed that junction capacitance and p-doping level in CIGS absorbers increase considerably after light soaking (LS). In this work, we focus on the LS behaviors of cells with different minority carrier lifetimes (Ïn). Experiments show that high efficiency cells with long Ïn lose open circuit voltage (Voc) and fill factor (FF) upon LS, whereas low efficiency cells with short Ïn lose less or even gain Voc and FF. The sodium content measured with glow discharge optical emission spectroscopy (GD-OES) increases in the region close to the CdS/CIGS interface with LS and may contribute to the observed LS behaviors. The change in electrical parameters is explained with simulations, which relate the Voc and FF changes to a reduced recombination rate in the space charge region due to the light-induced doping increase. The simulations also suggest that cells with higher n-doping in the CdS are less sensitive to changes in interface recombination rate and doping of CIGS, which agrees with the hypothesis that the CdS buffer deposition is important for the LS behavior.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 35-38
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 35-38
نویسندگان
Si Chen, Tobias Jarmar, Sven Södergren, Ulf Malm, Erik Wallin, Olle Lundberg, Sebastian Jander, Ralf Hunger, Lars Stolt,