کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034210 | 1518022 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous thin Ge2Sb2Te5 films were deposited by MOCVD (metal organic chemical vapor deposition) on three-dimensional structures. Ammonium gas, used as a reactant, reduced the deposition temperature to 150 °C, which is lower than that of metal-organic precursors. Introducing nitrogen and hydrogen radicals made by decomposition of the ammonium gas further reduced the growth temperature. The lowest growth temperature producing a realistic growth rate was 100 °C. Phase-change memory cells made of MOCVD-grown films were confirmed to have operation and reliability characteristics as good as those of conventional cells made of sputter-deposited films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 583, 29 May 2015, Pages 55-59
Journal: Thin Solid Films - Volume 583, 29 May 2015, Pages 55-59
نویسندگان
Yoshihisa Fujisaki, Yoshitaka Sasago, Takashi Kobayashi,