کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034283 | 1518023 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport](/preview/png/8034283.png)
چکیده انگلیسی
A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 139-145
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 139-145
نویسندگان
Shamara Collins, Sergiu Vatavu, Vamsi Evani, Md Khan, Sara Bakhshi, Vasilios Palekis, Corneliu Rotaru, Chris Ferekides,