کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034298 | 1518023 | 2015 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells](/preview/png/8034298.png)
چکیده انگلیسی
Cu2ZnSn(S,Se)4 (CZTSSe) solar cells were fabricated with an annealing treatment before the deposition of buffer layers to improve their photovoltaic performance. The CZTSSe absorbers were produced by sulfurization and selenization of metallic precursors. The efficiency of the solar cells increased from 5.5% without the annealing treatment to 8.8% with the annealing treatment at a temperature of 200 °C before buffer layer fabrication. Photoluminescence (PL) measurements revealed that the density of defects in the CZTSSe absorber that acted as non-radiative recombination centers decreased with the annealing treatment. The PL peak intensity exhibited a linear relationship with the open circuit voltage and the fill factor. In addition, the carrier density and hole mobility of the CZTSSe absorbers, which were respectively investigated by capacitance-voltage and Hall effect measurements, increased with the annealing treatment, thus improving cell performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 151-153
Journal: Thin Solid Films - Volume 582, 1 May 2015, Pages 151-153
نویسندگان
Daisuke Hironiwa, Noriyuki Sakai, Takuya Kato, Hiroki Sugimoto, Zeguo Tang, Jakapan Chantana, Takashi Minemoto,