Toward the understanding of annealing effects on (GaIn)2O3 films

(GaIn)2O3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N2, vacuum, Ar, O2) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)2O3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface.