کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8034726 1518029 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preferential {100} grain orientation in 10 micrometer-thick laser crystallized multicrystalline silicon on glass
ترجمه فارسی عنوان
جهت گیری گرانشی {100} ترجیحی در لیزر با ضخامت 10 میکرو متر لیزری بلورین سیلیکون مولتی کریستال بر روی شیشه
کلمات کلیدی
کریستال شدن فاز مایع، سیلیکون پلی، جهت گیری ترجیحی،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Liquid phase crystallization of 10 μm thin silicon layers on glass substrates was performed with a line-shaped continuous wave laser beam. The process window was investigated in terms of the scanning velocity of the laser, the pre-heating of the specimens and the applied laser intensity. We have identified the entire process window, in which large-scale crystallization without deformation or destruction of the substrate and cracking of the silicon layer can be obtained. The grain orientations of the resulting Si layers were analyzed using both electron backscatter diffraction (EBSD) and X-ray diffraction (XRD). The influence of the critical crystallization parameters on the grain orientation of the silicon film was examined. EBSD and XRD measurements show that a preferential {100} surface texture and {100} and {101} orientations in scanning direction of the laser can be achieved if appropriate crystallization parameters are used. This texture formation is accompanied with a substantial decrease of high angle grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 576, 2 February 2015, Pages 68-74
نویسندگان
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