کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034855 | 1518031 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements](/preview/png/8034855.png)
چکیده انگلیسی
The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current-voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, Ïb vs. 1/2kT revealed a double Gaussian distribution for the barrier height with Ïb,mean assuming values of 0.59 eV ± 0.07 (80-140 K) and 0.25 eV ± 0.12 (140-320 K) respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 574, 1 January 2015, Pages 32-37
Journal: Thin Solid Films - Volume 574, 1 January 2015, Pages 32-37
نویسندگان
A. Venter, D.M. Murape, J.R. Botha, F.D. Auret,