کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035082 1518045 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transparent conducting indium zinc tin oxide thin films with low indium content deposited by radio frequency magnetron sputtering
ترجمه فارسی عنوان
ورقهای نازک اکسید قلع روی دی اکسید کربن با محتوای اندکی کم که توسط پرتوهای مگنترون فرکانس رادیویی سپری می شوند
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Indium zinc tin oxide (IZTO) thin films were deposited on glass substrate by radio frequency magnetron sputtering at various substrate temperatures. The indium content of the IZTO targets was reduced from 60 at.% to 30 at.% and replaced with equal amounts of zinc and tin (20, 25, 30, and 35 at.%). The crystallinity of the as-deposited films improved with increasing substrate temperature. For all IZTO films, the onset of crystallization began at above 100 °C. The IZTO films deposited at higher substrate temperature showed better optical transmittance and lower electrical resistivity than those deposited at lower temperatures. The minimum electrical resistivity of approximately 8.0 × 10− 4 Ω·cm was observed in the IZTO films prepared deposited at 400 °C from targets containing 20 at.% Zn and 20 at.% Sn. The optical transmittance was above 80% for all IZTO films. On the other hand, higher co-doping resulted in amorphous films, which slightly impaired the electrical properties. The deterioration in the electrical properties of IZTO films, however, was compensated for by the higher optical transparency. Therefore, reduced-indium IZTO films are promising alternatives for some transparent conducting oxide applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 559, 30 May 2014, Pages 44-48
نویسندگان
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