کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035083 | 1518045 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on reactive sputtering to deposit transparent conductive amorphous In2O3-ZnO films using an In-Zn alloy target
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study on reactive sputtering to deposit transparent conductive amorphous In2O3-ZnO films using an In-Zn alloy target Study on reactive sputtering to deposit transparent conductive amorphous In2O3-ZnO films using an In-Zn alloy target](/preview/png/8035083.png)
چکیده انگلیسی
Amorphous indium-zinc-oxide films were deposited in the “transition region” by reactive sputtering using an In-Zn alloy target with a specially designed double feedback system. The cathode voltage showed a V- and circle-shaped curve as a function of O2 gas flow in the transition region, which differs from the S-shaped curve in Berg's model for reactive sputtering depositions. In-situ analyses with a quadrupole mass spectrometer combined with an energy analyzer revealed that the negative ions Oâ, O2â, InOâ, and InO2â, with high kinetic energies corresponding to the cathode voltage, were generated at the partially oxidized target surface. Furthermore the positive ions O+, Ar+, In+, and Zn+ with rather low kinetic energies (around 10Â eV) were confirmed to be generated by the charge exchange of sputtered neutral O, Ar, In and Zn atoms, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 559, 30 May 2014, Pages 49-52
Journal: Thin Solid Films - Volume 559, 30 May 2014, Pages 49-52
نویسندگان
Naoki Tsukamoto, Sakae Sensui, Junjun Jia, Nobuto Oka, Yuzo Shigesato,