کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035092 | 1518045 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
InOxFy thin films were epitaxially grown on Y-stabilized ZrO2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (TS), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high TS (â¥Â 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ~ 0.3. By decreasing TS, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at TS â¤Â 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 559, 30 May 2014, Pages 96-99
Journal: Thin Solid Films - Volume 559, 30 May 2014, Pages 96-99
نویسندگان
Sohei Okazaki, Yasushi Hirose, Shoichiro Nakao, Chang Yang, Isao Harayama, Daiichiro Sekiba, Tetsuya Hasegawa,