کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035110 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Highly n-doped, tensile-strained Ge is grown on Si substrate with a three-step method by solid source molecular beam epitaxy. Tensile strain of 0.22% is obtained in the Ge film due to the thermal expansion mismatch between Si and Ge. Activated n-type doping concentration of 5.0 Ã 1018 cmâ3 is also realized by Sb in-situ doping during epitaxy and post-growth annealing. Strong photoluminescence (PL) is observed around 1.5-1.6 μm from direct band gap transition of Ge at room-temperature. Starting from this material, free-standing microdisks are fabricated by electron beam lithography, dry etching of Ge and subsequent Si undercutting. Significantly enhanced light emission and sharp resonant peaks with Q-factor approaching 800, are observed in the PL spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 66-69
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 66-69
نویسندگان
Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki,