کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035129 | 1518048 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crack-healing behavior induced by oxidation in SiN/SiC nanolaminated films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The crack-healing behavior of SiN/SiC nanolaminated thin films in a high-temperature environment was investigated. Laminated films with a thickness of 1 μm were fabricated on a silicon substrate by ion-beam-assisted deposition. The number of layers was fixed to four, and the bilayer ratio of SiN to SiC was set to either 1 or 3. Cracked samples were heated in an air atmosphere at 600-1200 °C. In the case of the SiN/SiC nanolaminated film, the crack was perfectly filled with the oxide by heating at 1000 °C, whereas the crack of the SiN film was not healed. Moreover, the filled crack length of the SiN/SiC laminated film with a bilayer ratio of 1 was longer than that of the same type of film with a bilayer ratio of 3. These results suggest that inserting SiC layers in SiN films may confer crack-healing ability to SiN thin films. Moreover, the influence of heating on crackâhealing was investigated systematically. Crackâhealing was improved with increasing heating temperature and time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 68-73
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 68-73
نویسندگان
Masanori Nakatani, Junki Nishimura, Satoshi Hanaki, Hitoshi Uchida,