کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035134 1518047 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dynamic analysis of rapid-melting growth using SiGe on insulator
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Dynamic analysis of rapid-melting growth using SiGe on insulator
چکیده انگلیسی
Dynamics in rapid-melting growth are analyzed by using Si-segregation phenomena in SiGe-on-insulator (SGOI). To clarify growth-stream and growth-velocity, SiGe profiles in SGOI network and stripe structures are investigated. Based on 2-dimensional Si-concentration mapping for SGOI network, visualization of routes of growth fronts becomes possible. In addition, analysis of Si concentration profiles in SGOI stripes enables evaluation of growth velocity. It is clarified that growth velocity increases by 15 times with increasing growth distance for SGOI stripe with 500 μm length. These techniques are useful to understand detailed kinetics in rapid-melting growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 125-128
نویسندگان
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