کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035138 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (â¤Â 5 μm). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 μm. For intermediate growth-distance (5-150 μm), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (â¥Â 150 μm), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 μm is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 135-138
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 135-138
نویسندگان
T. Sadoh, M. Kurosawa, K. Toko, M. Miyao,