کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035148 1518047 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sn-induced low-temperature (~ 150 °C) crystallization of Ge on insulator
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Sn-induced low-temperature (~ 150 °C) crystallization of Ge on insulator
چکیده انگلیسی
Low-temperature formation (~ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ~ 200 °C).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 155-158
نویسندگان
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