کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035156 1518047 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis for positions of Sn atoms in epitaxial Ge1 − xSnx film in low temperature depositions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis for positions of Sn atoms in epitaxial Ge1 − xSnx film in low temperature depositions
چکیده انگلیسی
We investigated the position of Sn atoms in Ge1 − xSnx film grown at a low temperature by using the Extended X-ray Absorption Fine Structure (EXAFS) method. Vacancies had been expected to be introduced near the growing surface vicinity of a Sn atom and located at a split-vacancy position due to the binding nature between a Sn atom and a vacancy, which was predicted by the calculation for a bulk model in the literature. However, the EXAFS showed that almost all Sn atoms were located at the substitutional position and did not form a split-vacancy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 173-176
نویسندگان
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