کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035156 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis for positions of Sn atoms in epitaxial Ge1 â xSnx film in low temperature depositions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the position of Sn atoms in Ge1 â xSnx film grown at a low temperature by using the Extended X-ray Absorption Fine Structure (EXAFS) method. Vacancies had been expected to be introduced near the growing surface vicinity of a Sn atom and located at a split-vacancy position due to the binding nature between a Sn atom and a vacancy, which was predicted by the calculation for a bulk model in the literature. However, the EXAFS showed that almost all Sn atoms were located at the substitutional position and did not form a split-vacancy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 173-176
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 173-176
نویسندگان
Eiji Kamiyama, Koji Sueoka, Osamu Nakatsuka, Noriyuki Taoka, Shigeaki Zaima, Koji Izunome, Kazuhiko Kashima,