کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035187 1518047 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Schottky barrier height systematics studied by partisan interlayer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Schottky barrier height systematics studied by partisan interlayer
چکیده انگلیسی
The ability of the “partisan interlayer” technique in adjusting the Schottky barrier height (SBH), through the insertion of an atomic interlayer preferentially bonded to the semiconductor side of a metal-semiconductor interface, was systematically studied in the present work, focusing on the systematic trends, e.g., the variation of electron affinity shift with the species of adsorbate atoms, the variation of SBH on a specific adsorbate-terminated semiconductor (ATS) surface with metal work function, and the variation of SBH on different ATS surfaces with respect to a specific choice of metal, etc. A general conclusion is drawn, emphasizing the validity and the overall effectiveness of the “partisan interlayer” technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 254-257
نویسندگان
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